Characteristic Control of SWCNT-FET by Varying Its Chirality and Dimensions

Carbon nanotube (CNT) has witnessed great importance due to its electronic and mechanical properties. The CNTFET was designed provide high-performance devices. Therefore, the carbon is representing a potential material for future microelectronic In this paper, COMSOL Multiphysics used design simulate single-walled field-effect transistor with back gate. insulation layer in model silicon dioxide. influence of changing thickness on drain current discussed. addition, specification nanotubes investigated terms their diameter length. Moreover, paper reveals transport different applied gate voltage voltage. our work, behaves as n-type FET transconductance g m ≈1.25uA electron mobility equal 4.77×10-26cm2v-1s-1. To obtain semiconducting properties CNT material, it must consider chirality when altering diameter. proposed device, values range from 1nm 4.5nm. It found that increasing resulted decreasing bandgap 0.497 eV 0.110 4.075 uA 31.33 uA.